SUD40N08-16-E3
- Mfr.Part #
- SUD40N08-16-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 40A TO252
- Stock
- 7,332
- In Stock :
- 7,332
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- TrenchFET®
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 60A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 40A
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- SMD/SMT
- Dual Supply Voltage :
- 80V
- Power Dissipation-Max :
- 3W Ta 136W Tc
- Turn On Delay Time :
- 12 ns
- Height :
- 2.39mm
- Rise Time :
- 52ns
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 2V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Nominal Vgs :
- 4 V
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Length :
- 6.73mm
- Resistance :
- 16mOhm
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 25 ns
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- REACH SVHC :
- Unknown
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 40A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Width :
- 6.22mm
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 14 Weeks
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 80V
- Fall Time (Typ) :
- 10 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- Number of Channels :
- 1
- Published :
- 2009
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Number of Pins :
- 3
- Weight :
- 1.437803g
- Power Dissipation :
- 3W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1960pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SUD40N08-16-E3
N-Channel Tape & Reel (TR) 16m Ω @ 40A, 10V ±20V 1960pF @ 25V 60nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD40N08-16-E3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1960pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 40A.With a drain-source breakdown voltage of 80V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 80V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
SUD40N08-16-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 60A.
a threshold voltage of 2V
SUD40N08-16-E3 Applications
There are a lot of Vishay Siliconix
SUD40N08-16-E3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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