SUD40N02-3M3P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

40A

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Resistance :

3.3MOhm

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

40 ns

Current - Continuous Drain (Id) @ 25°C :

24.4A Ta 40A Tc

Input Capacitance (Ciss) (Max) @ Vds :

6520pF @ 10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Mounting Type :

Surface Mount

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.3W Ta 79W Tc

Turn-Off Delay Time :

67 ns

Vgs (Max) :

±20V

Fall Time (Typ) :

33 ns

RoHS Status :

ROHS3 Compliant

Published :

2016

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

3.3W

Number of Terminations :

2

Rise Time :

30ns

Continuous Drain Current (ID) :

24.4A

Pulsed Drain Current-Max (IDM) :

100A

Pin Count :

4