SUD25N15-52-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

FET Type :

N-Channel

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

175°C

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Length :

6.73mm

Fall Time (Typ) :

60 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Series :

TrenchFET®

Vgs (Max) :

±20V

Power Dissipation-Max :

3W Ta 136W Tc

Turn On Delay Time :

15 ns

Published :

2008

Mounting Type :

Surface Mount

Turn-Off Delay Time :

25 ns

Width :

6.22mm

Weight :

1.437803g

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Pin Count :

4

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

70ns

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1725pF @ 25V

Lead Free :

Lead Free

ECCN Code :

EAR99

Nominal Vgs :

4 V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

50A

Height :

2.507mm

Resistance :

52mOhm

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

25A

Pbfree Code :

yes

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Drain to Source Breakdown Voltage :

150V

Power Dissipation :

3W

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Rds On (Max) @ Id, Vgs :

52m Ω @ 5A, 10V