SUD23N06-31-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

250ns

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Length :

6.73mm

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

FET Type :

N-Channel

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

21.4A Tc

Contact Plating :

Tin

Published :

2009

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Fall Time (Typ) :

68 ns

JESD-609 Code :

e3

Height :

2.39mm

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Weight :

1.437803g

Width :

6.22mm

Power Dissipation-Max :

5.7W Ta 31.25W Tc

Power Dissipation :

5.7W

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

20 mJ

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

31m Ω @ 15A, 10V

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

18 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

35 ns

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3V @ 250µA

Pulsed Drain Current-Max (IDM) :

50A

Resistance :

31mOhm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Number of Elements :

1

Threshold Voltage :

3V

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

9.1A

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Pbfree Code :

yes