STX817A
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- Mfr.Part #
- STX817A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO92-3
- Stock
- 29,510
- In Stock ：
- 29,510
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Base Part Number :
- STX817
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 80V
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Max Power Dissipation :
- 900mW
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 1.5A
- Height :
- 4.95mm
- Width :
- 3.94mm
- Transition Frequency :
- 50MHz
- Number of Pins :
- 3
- Length :
- 4.95mm
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- Termination :
- Through Hole
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 900mW
- Transistor Type :
- PNP
- hFE Min :
- 140
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1mA
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- Gain Bandwidth Product :
- 50MHz
- Frequency :
- 50MHz
- Datasheets
- STX817A
STX817A Documents
,TO-226_straightlead.jpg)
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STX817A Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
STX817A Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
STX817A Applications
There are a lot of STMicroelectronics
STX817A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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