STX817A
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- Mfr.Part #
- STX817A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO92-3
- Stock
- 29,510
- In Stock ：
- 29,510
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 140
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 50MHz
- Height :
- 4.95mm
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Wire
- Base Part Number :
- STX817
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Width :
- 3.94mm
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 50MHz
- Power Dissipation :
- 900mW
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity/Channel Type :
- PNP
- Frequency :
- 50MHz
- Number of Elements :
- 1
- Termination :
- Through Hole
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 900mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 1.5A
- Collector Emitter Saturation Voltage :
- 500mV
- Length :
- 4.95mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector Cutoff (Max) :
- 1mA
- Datasheets
- STX817A
STX817A Documents
,TO-226_straightlead.jpg)
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STX817A Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
STX817A Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
STX817A Applications
There are a lot of STMicroelectronics
STX817A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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