STX817A
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- Mfr.Part #
- STX817A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO92-3
- Stock
- 29,510
- In Stock ：
- 29,510
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Width :
- 3.94mm
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 900mW
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 1mA
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Length :
- 4.95mm
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Terminations :
- 3
- hFE Min :
- 140
- Transition Frequency :
- 50MHz
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1.5A
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Height :
- 4.95mm
- Transistor Type :
- PNP
- Power Dissipation :
- 900mW
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Gain Bandwidth Product :
- 50MHz
- Termination :
- Through Hole
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Base Part Number :
- STX817
- Datasheets
- STX817A
,TO-226_straightlead.jpg)
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STX817A Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
STX817A Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
STX817A Applications
There are a lot of STMicroelectronics
STX817A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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