STX817A
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- Mfr.Part #
- STX817A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO92-3
- Stock
- 29,510
- In Stock ：
- 29,510
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- PNP
- Power Dissipation :
- 900mW
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Length :
- 4.95mm
- Width :
- 3.94mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Max Power Dissipation :
- 900mW
- Terminal Form :
- Wire
- hFE Min :
- 140
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Base Part Number :
- STX817
- Current - Collector Cutoff (Max) :
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Collector Base Voltage (VCBO) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Transition Frequency :
- 50MHz
- Max Collector Current :
- 1.5A
- Termination :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Gain Bandwidth Product :
- 50MHz
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Height :
- 4.95mm
- Datasheets
- STX817A
,TO-226_straightlead.jpg)
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STX817A Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
STX817A Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
STX817A Applications
There are a lot of STMicroelectronics
STX817A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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