STW55NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

350W Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Resistance :

60mOhm

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Lead Free :

Lead Free

Pin Count :

3

Turn On Delay Time :

33 ns

Fall Time (Typ) :

96 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

JEDEC-95 Code :

TO-247AC

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

188 ns

Threshold Voltage :

4V

Continuous Drain Current (ID) :

51A

Rise Time :

68ns

Element Configuration :

Single

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

850 mJ

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Length :

15.75mm

Series :

FDmesh™ II

Pulsed Drain Current-Max (IDM) :

204A

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 50V

Number of Elements :

1

ECCN Code :

EAR99

Height :

24.45mm

Transistor Element Material :

SILICON

Number of Pins :

3

Base Part Number :

STW55N

Max Junction Temperature (Tj) :

150°C

Package / Case :

TO-247-3

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Width :

5.15mm

Power Dissipation :

350W

Packaging :

Tube

Mounting Type :

Through Hole

Number of Channels :

1

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

60m Ω @ 25.5A, 10V