STW50NB20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Power Dissipation :

280W

Rds On (Max) @ Id, Vgs :

55m Ω @ 25A, 10V

Base Part Number :

STW50N

Power Dissipation-Max :

280W Tc

Current Rating :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Elements :

1

Drain to Source Breakdown Voltage :

200V

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Package / Case :

TO-247-3

Rise Time :

65ns

Drain-source On Resistance-Max :

0.055Ohm

Series :

PowerMESH™

Transistor Application :

SWITCHING

Voltage - Rated DC :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

27 ns

ECCN Code :

EAR99

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Qualification Status :

Not Qualified

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Mount :

Through Hole

Pbfree Code :

yes

Continuous Drain Current (ID) :

50A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

200A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V