STW34N65M5
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- Mfr.Part #
- STW34N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 28A TO247
- Stock
- 8
- In Stock ：
- 8
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Resistance :
- 110mOhm
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 14A, 10V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 190W Tc
- Length :
- 15.75mm
- Height :
- 20.15mm
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5.15mm
- Gate Charge (Qg) (Max) @ Vgs :
- 62.5nC @ 10V
- Base Part Number :
- STW34N
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 100V
- Power Dissipation :
- 190W
- Continuous Drain Current (ID) :
- 28A
- Turn On Delay Time :
- 59 ns
- Element Configuration :
- Single
- Series :
- MDmesh™ V
- Drain to Source Breakdown Voltage :
- 650V
- Number of Terminations :
- 3
- Vgs (Max) :
- ±25V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 17 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 59 ns
- Datasheets
- STW34N65M5
STW34N65M5 Documents
N-Channel Tube 110m Ω @ 14A, 10V ±25V 2700pF @ 100V 62.5nC @ 10V TO-247-3
STW34N65M5 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2700pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 28A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 59 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 59 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STW34N65M5 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 59 ns
STW34N65M5 Applications
There are a lot of STMicroelectronics
STW34N65M5 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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