STW32N65M5
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- Mfr.Part #
- STW32N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 24A TO247-3
- Stock
- 3,885
- In Stock ：
- 3,885
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- STW32N
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 150W Tc
- Avalanche Energy Rating (Eas) :
- 650 mJ
- Turn-Off Delay Time :
- 53 ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 150W
- Number of Elements :
- 1
- Package / Case :
- TO-247-3
- Continuous Drain Current (ID) :
- 24A
- Height :
- 20.15mm
- Fall Time (Typ) :
- 16 ns
- RoHS Status :
- ROHS3 Compliant
- Width :
- 5.15mm
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 650V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Pins :
- 3
- Mount :
- Through Hole
- Rise Time :
- 12ns
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 96A
- Resistance :
- 119mOhm
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Packaging :
- Tube
- Length :
- 15.75mm
- Gate to Source Voltage (Vgs) :
- 25V
- Vgs (Max) :
- ±25V
- Terminal Finish :
- Tin (Sn)
- Series :
- MDmesh™ V
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 119m Ω @ 12A, 10V
- Turn On Delay Time :
- 53 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3320pF @ 100V
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE ENERGY RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STW32N65M5
N-Channel Tube 119m Ω @ 12A, 10V ±25V 3320pF @ 100V 72nC @ 10V TO-247-3
STW32N65M5 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 650 mJ.A device's maximum input capacitance is 3320pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 53 ns.Its maximum pulsed drain current is 96A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 53 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STW32N65M5 Features
the avalanche energy rating (Eas) is 650 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 96A.
STW32N65M5 Applications
There are a lot of STMicroelectronics
STW32N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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