STW28N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Length :

15.75mm

Height :

20.15mm

Element Configuration :

Single

Mounting Type :

Through Hole

Contact Plating :

Tin

Turn On Delay Time :

14.5 ns

Rise Time :

7.2ns

Fall Time (Typ) :

8 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

600V

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

88A

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Number of Channels :

1

Lead Free :

Lead Free

Package / Case :

TO-247-3

Turn-Off Delay Time :

100 ns

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Transistor Element Material :

SILICON

Base Part Number :

STW28N

Power Dissipation-Max :

170W Tc

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

24A

Series :

MDmesh™ II Plus

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 100V

Rds On (Max) @ Id, Vgs :

150m Ω @ 12A, 10V

FET Type :

N-Channel

Number of Terminations :

3

Mount :

Through Hole

Number of Pins :

3

Width :

5.15mm

Drain Current-Max (Abs) (ID) :

22A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Elements :

1

Weight :

38.000013g

Power Dissipation :

170W