STW20N65M5
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- Mfr.Part #
- STW20N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 18A TO247
- Stock
- 34,793
- In Stock ：
- 34,793
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 43 ns
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 18A
- Length :
- 15.75mm
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 7.5ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 7.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Width :
- 5.15mm
- Vgs (Max) :
- ±25V
- Power Dissipation-Max :
- 130W Tc
- Transistor Element Material :
- SILICON
- Base Part Number :
- STW20N
- Drain to Source Breakdown Voltage :
- 650V
- Resistance :
- 168MOhm
- Avalanche Energy Rating (Eas) :
- 270 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 72A
- Power Dissipation :
- 130W
- Factory Lead Time :
- 17 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 20.15mm
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- MDmesh™ V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1345pF @ 100V
- Turn On Delay Time :
- 43 ns
- Number of Elements :
- 1
- Datasheets
- STW20N65M5
N-Channel Tube 190m Ω @ 9A, 10V ±25V 1345pF @ 100V 45nC @ 10V TO-247-3
STW20N65M5 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 270 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1345pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 43 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 43 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STW20N65M5 Features
the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 72A.
STW20N65M5 Applications
There are a lot of STMicroelectronics
STW20N65M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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