STW25NM50N
- Mfr.Part #
- STW25NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO247-3
- Stock
- 37,693
- In Stock :
- 37,693
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- STW25N
- Pulsed Drain Current-Max (IDM) :
- 88A
- Power Dissipation-Max :
- 160W Tc
- JEDEC-95 Code :
- TO-247AC
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 3V
- Voltage - Rated DC :
- 550V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 160W
- Drain to Source Breakdown Voltage :
- 500V
- Current Rating :
- 22A
- Vgs (Max) :
- ±25V
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Resistance :
- 140mOhm
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2565pF @ 25V
- Mount :
- Through Hole
- Packaging :
- Tube
- Package / Case :
- TO-247-3
- Rise Time :
- 23ns
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 75 ns
- Continuous Drain Current (ID) :
- 22A
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 22 ns
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 25V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 11A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Series :
- MDmesh™ II
- Transistor Element Material :
- SILICON
- Datasheets
- STW25NM50N

N-Channel Tube 140m Ω @ 11A, 10V ±25V 2565pF @ 25V 84nC @ 10V TO-247-3
STW25NM50N Description
STW25NM50N is a 500v N-channel MDmesh? II Power MOSFET. This STMicroelectronics STW25NM50N is realized with the second generation of MDmesh? Technology. This revolutionary MOSFET associates a new vertical structure to the Company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charge. It is, therefore, suitable for the most demanding high-efficiency converters.
STW25NM50N Features
-
100% avalanche tested
-
Low input capacitance and gate charge
-
Low gate input resistance
-
Drain-source voltage (VGS = 0): 500v
-
Gate- source voltage: ?à25v
STW25NM50N Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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