STW23NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 50V

Terminal Finish :

Tin

JESD-609 Code :

e3

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

19A

Operating Mode :

ENHANCEMENT MODE

Series :

MDmesh™ II

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

9.5A

Mount :

Through Hole

Drain to Source Breakdown Voltage :

600V

Pulsed Drain Current-Max (IDM) :

76A

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

25V

Turn-Off Delay Time :

90 ns

Number of Elements :

1

Power Dissipation :

150W

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

180m Ω @ 9.5A, 10V

Fall Time (Typ) :

36 ns

Packaging :

Tube

Drain-source On Resistance-Max :

0.18ohm

Rise Time :

15ns

Element Configuration :

Single

Number of Pins :

3

Pin Count :

3

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

150W Tc

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

19A Tc

FET Type :

N-Channel

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

700 mJ

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STW23N