STW18N60M2

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Mfr.Part #
STW18N60M2
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 13A TO247
Stock
3,193
In Stock :
3,193

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
RoHS Status :
ROHS3 Compliant
Base Part Number :
STW18N
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.28Ohm
Case Connection :
DRAIN
FET Type :
N-Channel
Power Dissipation-Max :
110W Tc
Avalanche Energy Rating (Eas) :
135 mJ
Packaging :
Tube
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±25V
ECCN Code :
EAR99
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 250µA
Rds On (Max) @ Id, Vgs :
280m Ω @ 6.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
791pF @ 100V
Number of Elements :
1
Continuous Drain Current (ID) :
13A
Terminal Position :
Single
Factory Lead Time :
16 Weeks
Gate Charge (Qg) (Max) @ Vgs :
21.5nC @ 10V
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
TO-247-3
Mount :
Through Hole
DS Breakdown Voltage-Min :
600V
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
52A
Series :
MDmesh™ II Plus
Datasheets
STW18N60M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STW18N60M2 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STW18N, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, STW18N60M2 pinout, STW18N60M2 datasheet PDF, STW18N60M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STW18N60M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STW18N60M2


N-Channel Tube 280m Ω @ 6.5A, 10V ±25V 791pF @ 100V 21.5nC @ 10V 600V TO-247-3

STW18N60M2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 135 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 791pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 13A.Peak drain current for this device is 52A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

STW18N60M2 Features


the avalanche energy rating (Eas) is 135 mJ
a continuous drain current (ID) of 13A
based on its rated peak drain current 52A.
a 600V drain to source voltage (Vdss)


STW18N60M2 Applications


There are a lot of STMicroelectronics
STW18N60M2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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