STW11NB80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Voltage - Rated DC :

800V

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Fall Time (Typ) :

23 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.8Ohm

Vgs (Max) :

±30V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

11A

Base Part Number :

STW11N

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

44A

Mount :

Through Hole

Power Dissipation-Max :

190W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Series :

PowerMESH™

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Reach Compliance Code :

not_compliant

Pin Count :

3

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

800m Ω @ 5.5A, 10V

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

800V

Power Dissipation :

190W

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

500 mJ

Continuous Drain Current (ID) :

11A

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

13ns