STW160N75F3
- Mfr.Part #
- STW160N75F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A TO247-3
- Stock
- 4,341
- In Stock :
- 4,341
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Turn On Delay Time :
- 22 ns
- Turn-Off Delay Time :
- 100 ns
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 75V
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 480A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 20.15mm
- Power Dissipation :
- 330W
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 60A, 10V
- Vgs (Max) :
- ±20V
- Series :
- STripFET™
- Power Dissipation-Max :
- 330W Tc
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Rise Time :
- 65ns
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STW160
- Length :
- 15.75mm
- Fall Time (Typ) :
- 15 ns
- Element Configuration :
- Single
- Pin Count :
- 3
- Package / Case :
- TO-247-3
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Threshold Voltage :
- 4V
- Continuous Drain Current (ID) :
- 60A
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- JEDEC-95 Code :
- TO-247AB
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Width :
- 5.15mm
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Resistance :
- 4mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 6750pF @ 25V
- Datasheets
- STW160N75F3

N-Channel Tube 4m Ω @ 60A, 10V ±20V 6750pF @ 25V 85nC @ 10V TO-247-3
STW160N75F3 Description
STW160N75F3 is a 75v N-channel STripFET? Power MOSFET. This N-channel enhancement mode Power MOSFET STW160N75F3 is the latest refinement of ST’s STripFET? process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics, and low gate charge. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STW160N75F3 is in the TO-247 package with 330W power dissipation.
STW160N75F3 Features
-
Ultra-low on-resistance
-
100% avalanche tested
-
Drain-source voltage (VGS=0):75V
-
Gate-source voltage: ±20V
-
Drain current (continuous) at TC = 25°C: 120A
STW160N75F3 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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