STW15NM60ND
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- Mfr.Part #
- STW15NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO247-3
- Stock
- 6,951
- In Stock ：
- 6,951
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- STW15N
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 50V
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 600V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±25V
- Height :
- 20.15mm
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Power Dissipation :
- 125W
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 7A, 10V
- Number of Pins :
- 3
- Rise Time :
- 20ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Power Dissipation-Max :
- 125W Tc
- Resistance :
- 299mOhm
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 25V
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 15.75mm
- Package / Case :
- TO-247-3
- ECCN Code :
- EAR99
- Width :
- 5.15mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 47 ns
- JEDEC-95 Code :
- TO-247AC
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 14A
- Series :
- FDmesh™ II
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 28 ns
- Turn On Delay Time :
- 17 ns
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 56A
- Datasheets
- STW15NM60ND
N-Channel Tube 299m Ω @ 7A, 10V ±25V 1250pF @ 50V 40nC @ 10V TO-247-3
STW15NM60ND Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1250pF @ 50V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 47 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW15NM60ND Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
STW15NM60ND Applications
There are a lot of STMicroelectronics
STW15NM60ND applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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