STW15NB50

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Drain-source On Resistance-Max :

0.36ohm

Pulsed Drain Current-Max (IDM) :

58.4A

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

14.6A Tc

Element Configuration :

Single

JESD-609 Code :

e3

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

FET Type :

N-Channel

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

360m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Power Dissipation :

190W

Pin Count :

3

Packaging :

Tube

Drain to Source Breakdown Voltage :

500V

Avalanche Energy Rating (Eas) :

850 mJ

JESD-30 Code :

R-PSFM-T3

Rise Time :

14ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JEDEC-95 Code :

TO-247AC

Power Dissipation-Max :

190W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

14.6A

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Current Rating :

14.6A

Additional Feature :

AVALANCHE RATED

Voltage - Rated DC :

500V

Base Part Number :

STW15N

RoHS Status :

Non-RoHS Compliant

Series :

PowerMESH™

Package / Case :

TO-247-3

Fall Time (Typ) :

25 ns

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Number of Elements :

1