STW13NK50Z

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Mfr.Part #
STW13NK50Z
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 11A TO247-3
Stock
13,087
In Stock :
13,087

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
61 ns
Current - Continuous Drain (Id) @ 25°C :
11A Tc
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-247AC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
FET Type :
N-Channel
Fall Time (Typ) :
24 ns
Continuous Drain Current (ID) :
11A
Avalanche Energy Rating (Eas) :
240 mJ
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Mount :
Through Hole
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
44A
Rds On (Max) @ Id, Vgs :
480m Ω @ 6.5A, 10V
Base Part Number :
STW13N
Vgs(th) (Max) @ Id :
4.5V @ 100μA
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Rise Time :
23ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
500V
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 25V
Series :
SuperMESH™
Drain-source On Resistance-Max :
0.48Ohm
Power Dissipation-Max :
140W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-247-3
Power Dissipation :
140W
Gate to Source Voltage (Vgs) :
30V
JESD-30 Code :
R-PSFM-T3
Number of Terminations :
3
Datasheets
STW13NK50Z
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STW13NK50Z from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Base Part Number:STW13N, Package / Case:TO-247-3, Number of Terminations:3, STW13NK50Z pinout, STW13NK50Z datasheet PDF, STW13NK50Z amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STW13NK50Z ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STW13NK50Z


N-Channel Tube 480m Ω @ 6.5A, 10V ±30V 1600pF @ 25V 47nC @ 10V TO-247-3

STW13NK50Z Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [61 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 44A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STW13NK50Z Features


the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 61 ns
based on its rated peak drain current 44A.


STW13NK50Z Applications


There are a lot of STMicroelectronics
STW13NK50Z applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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