STW13NB60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

190W Tc

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

PowerMESH™

JESD-609 Code :

e3

Fall Time (Typ) :

15 ns

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

13A

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs (Max) :

±30V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

600V

Pulsed Drain Current-Max (IDM) :

52A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

540m Ω @ 6.5A, 10V

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Contains Lead

Avalanche Energy Rating (Eas) :

700 mJ

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.95

Rise Time :

13ns

Drain-source On Resistance-Max :

0.54Ohm

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Power Dissipation :

190W

Element Configuration :

Single

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Transistor Element Material :

SILICON

Current Rating :

13A

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Base Part Number :

STW13N

Package / Case :

TO-247-3