STV250N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

300W Tc

Peak Reflow Temperature (Cel) :

250

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

10

Mount :

Surface Mount

Mounting Type :

Surface Mount

Base Part Number :

STV250

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

200A

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Power Dissipation :

300W

Case Connection :

DRAIN

Terminal Position :

Dual

Fall Time (Typ) :

50 ns

Pin Count :

10

Drain Current-Max (Abs) (ID) :

250A

Package / Case :

PowerSO-10 Exposed Bottom Pad

Resistance :

2.2MOhm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 75A, 10V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

200A Tc

ECCN Code :

EAR99

Turn-Off Delay Time :

110 ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Turn On Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

150ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Terminations :

10

RoHS Status :

ROHS3 Compliant

Series :

STripFET™ III

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

55V

JESD-609 Code :

e3