STV240N75F3
- Mfr.Part #
- STV240N75F3
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 240A 10POWERSO
- Stock
- 29
- In Stock :
- 29
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Number of Terminations :
- 10
- Width :
- 9.5mm
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 10
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 960A
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- STripFET™ III
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 3.75mm
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 250
- Turn-Off Delay Time :
- 100 ns
- Base Part Number :
- STV240
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 15 ns
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Length :
- 9.6mm
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 300W
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 4V
- Power Dissipation-Max :
- 300W Tc
- Factory Lead Time :
- 12 Weeks
- Vgs (Max) :
- ±20V
- Package / Case :
- PowerSO-10 Exposed Bottom Pad
- Drain to Source Breakdown Voltage :
- 75V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 120A, 10V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Resistance :
- 2.6MOhm
- Pin Count :
- 10
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Turn On Delay Time :
- 25 ns
- Continuous Drain Current (ID) :
- 240A
- REACH SVHC :
- No SVHC
- Rise Time :
- 70ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- STV240N75F3

N-Channel Tape & Reel (TR) 2.6m Ω @ 120A, 10V ±20V 6800pF @ 25V 100nC @ 10V PowerSO-10 Exposed Bottom Pad
STV240N75F3 Description
This STV240N75F3 is an N-channel Power MOSFET developed using STripFET? F3 technology. STV240N75F3 is designed to deliver enhanced switching performance by reducing on-resistance and gate charge.
STV240N75F3 Features
-
Conduction losses reduced
-
Low profile, very low parasitic inductance
-
Type of Transistor: MOSFET
-
Type of Control Channel: N -Channel
-
Maximum Power Dissipation (Pd): 300 W
-
Maximum Drain-Source Voltage |Vds|: 75 V
-
Maximum Gate-Source Voltage |Vgs|: 20 V
-
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
-
Maximum Drain Current |Id|: 240 A
-
Maximum Junction Temperature (Tj): 175 °C
-
Total Gate Charge (Qg): 85 nC
-
Rise Time (tr): 70 nS
-
Drain-Source Capacitance (Cd): 1100 pF
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Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
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Package: POWERSO10
STV240N75F3 Applications
-
Switching applications
-
High-speed DC-DC converters
-
RF envelope tracking
-
Class-D audio amplifiers
-
Class-E wireless charging
-
High-precision motor control
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