STU7N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Height :

6.2mm

Rise Time :

8.3ns

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation-Max :

110W Tc

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Case Connection :

DRAIN

Fall Time (Typ) :

20.2 ns

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

17 Weeks

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

23.7 ns

Base Part Number :

STU7N

Avalanche Energy Rating (Eas) :

88 mJ

Drain to Source Breakdown Voltage :

800V

Element Configuration :

Single

Power Dissipation :

110W

Gate Charge (Qg) (Max) @ Vgs :

13.4nC @ 10V

Pulsed Drain Current-Max (IDM) :

24A

Lead Free :

Lead Free

Length :

6.6mm

Vgs(th) (Max) @ Id :

5V @ 100µA

Drain Current-Max (Abs) (ID) :

6A

Packaging :

Tube

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 100V

Continuous Drain Current (ID) :

6A

Turn On Delay Time :

11.3 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Width :

2.4mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

Series :

SuperMESH5™