STU7N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Element Configuration :

Single

DS Breakdown Voltage-Min :

600V

Turn-Off Delay Time :

19.3 ns

Number of Terminations :

3

Number of Pins :

3

Width :

2.4mm

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Length :

6.6mm

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

271pF @ 100V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Continuous Drain Current (ID) :

5A

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

99 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

6.2mm

Number of Elements :

1

Drain-source On Resistance-Max :

0.95Ohm

Fall Time (Typ) :

15.9 ns

Turn On Delay Time :

7.6 ns

Drain Current-Max (Abs) (ID) :

5A

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tube

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

7.2ns

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 10V

Pulsed Drain Current-Max (IDM) :

20A

Base Part Number :

STU7N

Transistor Application :

SWITCHING

Power Dissipation :

60W

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

60W Tc

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Series :

MDmesh™ II Plus

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.5A, 10V