STU6N62K3
- Mfr.Part #
- STU6N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 5.5A IPAK
- Stock
- 6,647
- In Stock :
- 6,647
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.6mm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Power Dissipation :
- 90W
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 90W Tc
- Pulsed Drain Current-Max (IDM) :
- 22A
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 5.5A
- Radiation Hardening :
- No
- Additional Feature :
- ULTRA LOW-ON RESISTANCE
- Rise Time :
- 12.5ns
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 12 Weeks
- Height :
- 6.9mm
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 19 ns
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 22 ns
- Base Part Number :
- STU6N
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Threshold Voltage :
- 3.75V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 620V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Turn-Off Delay Time :
- 49 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 875pF @ 50V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Width :
- 2.4mm
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2.8A, 10V
- ECCN Code :
- EAR99
- Series :
- SuperMESH3™
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Datasheets
- STU6N62K3

N-Channel Tube 1.2 Ω @ 2.8A, 10V ±30V 875pF @ 50V 30nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
The SuperMESH3?Power MOSFETs STU6N62K3 is the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
STU6N62K3 Features
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery characteristics
Zener-protected
STU6N62K3 Applications
Industrial
Aerospace & defenseAppliancesBuilding automationElectronic point of sale (EPOS)Factory automation & controlGrid infrastructureIndustrial transport (non-car & non-light truck)LightingMedicalMotor drivesPower deliveryPro audio, video & signageTest & measurement
Enterprise systems
Data center & enterprise computingEnterprise machineEnterprise projectors
Personal electronics
Connected peripherals & printersData storageGamingHome theater & entertainmentMobile phonesPC & notebooksPortable electronicsTabletsTVWearables (non-medical)
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