STU6N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rise Time :

7.4ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

FET Type :

N-Channel

Packaging :

Tube

Drain to Source Breakdown Voltage :

650V

Width :

2.4mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

ECCN Code :

EAR99

Turn On Delay Time :

9.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

232pF @ 100V

Element Configuration :

Single

Fall Time (Typ) :

22.5 ns

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.25A, 10V

Number of Pins :

3

Turn-Off Delay Time :

24 ns

Power Dissipation-Max :

60W Tc

Series :

MDmesh™ II Plus

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Base Part Number :

STU6N

Vgs (Max) :

±25V

Height :

6.2mm

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

4.5A

Mount :

Through Hole

Mounting Type :

Through Hole

Length :

6.6mm

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Factory Lead Time :

26 Weeks

Radiation Hardening :

No

Power Dissipation :

60W

Gate to Source Voltage (Vgs) :

25V