STT818B
- Mfr.Part #
- STT818B
- Manufacturer
- STMicroelectronics
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A SOT23-6L
- Stock
- 15,594
- In Stock :
- 15,594
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Length :
- 3.05mm
- hFE Min :
- 100
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -210mV
- Number of Terminations :
- 6
- Max Collector Current :
- 3A
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.2W
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 20mA, 2A
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Power Dissipation :
- 1.2W
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- Package / Case :
- SOT-23-6
- Pin Count :
- 6
- Current Rating :
- -3A
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Base Part Number :
- STT818
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Width :
- 1.75mm
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Height :
- 1.3mm
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -30V
- Datasheets
- STT818B

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
STT818B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 1V.The collector emitter saturation voltage is -210mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 20mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
STT818B Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 500mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
STT818B Applications
There are a lot of STMicroelectronics
STT818B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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