STR2N2VH5
- Mfr.Part #
- STR2N2VH5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 2.3A SOT23
- Stock
- 16,025
- In Stock :
- 16,025
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- STR2
- Vgs (Max) :
- ±8V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 14 Weeks
- Terminal Position :
- Dual
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Length :
- 3.04mm
- Width :
- 1.75mm
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 2A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 4.6nC @ 4.5V
- Height :
- 1.3mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Resistance :
- 30mOhm
- Power Dissipation-Max :
- 350mW Tc
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA (Min)
- Continuous Drain Current (ID) :
- 2.3A
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Series :
- STripFET™ V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 8V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 367pF @ 16V
- Power Dissipation :
- 350mW
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 20V
- Packaging :
- Cut Tape (CT)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Datasheets
- STR2N2VH5
STR2N2VH5 Documents

N-Channel Cut Tape (CT) 30m Ω @ 2A, 4.5V ±8V 367pF @ 16V 4.6nC @ 4.5V TO-236-3, SC-59, SOT-23-3
STR2N2VH5 Description
The device is an N-channel power MOSFET developed by STripFET . H5 technology of STMicro electronics. The device is optimized to achieve extremely low on-resistance, making FOM among the best of its kind.
STR2N2VH5 Features
? Low on-resistance RDS(on)
? High avalanche ruggedness
? Low gate drive power loss
STR2N2VH5 Applications
? Switching applications
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