STR2550

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Mfr.Part #
STR2550
Manufacturer
STMicroelectronics
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 500V 0.5A SOT23-3
Stock
2,970
In Stock :
2,970

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
-300mV
Width :
1.75mm
Emitter Base Voltage (VEBO) :
-7V
Max Collector Current :
500mA
Number of Pins :
3
Element Configuration :
Single
Transistor Application :
SWITCHING
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power - Max :
500mW
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
PNP
ECCN Code :
EAR99
Factory Lead Time :
8 Weeks
Operating Temperature :
150°C TJ
Terminal Position :
Dual
Base Part Number :
STR1550
Current - Collector Cutoff (Max) :
10μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA 10V
Packaging :
Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 50mA
Height :
1.3mm
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Collector Emitter Voltage (VCEO) :
500V
Mount :
Surface Mount
Number of Elements :
1
Max Breakdown Voltage :
500V
REACH SVHC :
No SVHC
Length :
3.04mm
Max Power Dissipation :
500mW
Collector Emitter Breakdown Voltage :
500V
Transistor Element Material :
SILICON
hFE Min :
10
Collector Base Voltage (VCBO) :
-500V
Datasheets
STR2550
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics STR2550 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:150°C TJ, Base Part Number:STR1550, Mounting Type:Surface Mount, STR2550 pinout, STR2550 datasheet PDF, STR2550 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics STR2550 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STR2550


PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount

STR2550 Overview


In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.

STR2550 Features


the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V


STR2550 Applications


There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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