STR2550
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- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock ：
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Length :
- 3.04mm
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- -500V
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- hFE Min :
- 10
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 500mW
- Collector Emitter Breakdown Voltage :
- 500V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -7V
- Number of Elements :
- 1
- Width :
- 1.75mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STR1550
- Collector Emitter Saturation Voltage :
- -300mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Power - Max :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 500V
- Packaging :
- Cut Tape (CT)
- Operating Temperature :
- 150°C TJ
- Height :
- 1.3mm
- Max Breakdown Voltage :
- 500V
- Datasheets
- STR2550
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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