STR2550
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- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock ：
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 10
- Height :
- 1.3mm
- Width :
- 1.75mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -300mV
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 500V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 500V
- Power - Max :
- 500mW
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Base Part Number :
- STR1550
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Max Power Dissipation :
- 500mW
- Length :
- 3.04mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 500V
- Collector Base Voltage (VCBO) :
- -500V
- Emitter Base Voltage (VEBO) :
- -7V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STR2550
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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