STR2550
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- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock ：
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -300mV
- Width :
- 1.75mm
- Emitter Base Voltage (VEBO) :
- -7V
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Base Part Number :
- STR1550
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Packaging :
- Cut Tape (CT)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- Height :
- 1.3mm
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 500V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 500V
- REACH SVHC :
- No SVHC
- Length :
- 3.04mm
- Max Power Dissipation :
- 500mW
- Collector Emitter Breakdown Voltage :
- 500V
- Transistor Element Material :
- SILICON
- hFE Min :
- 10
- Collector Base Voltage (VCBO) :
- -500V
- Datasheets
- STR2550
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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