STR2550
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- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock ：
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 500V
- Number of Elements :
- 1
- Width :
- 1.75mm
- Emitter Base Voltage (VEBO) :
- -7V
- Power - Max :
- 500mW
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 3.04mm
- Max Power Dissipation :
- 500mW
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Packaging :
- Cut Tape (CT)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Height :
- 1.3mm
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 500V
- Collector Base Voltage (VCBO) :
- -500V
- Max Collector Current :
- 500mA
- Mount :
- Surface Mount
- hFE Min :
- 10
- REACH SVHC :
- No SVHC
- Base Part Number :
- STR1550
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Saturation Voltage :
- -300mV
- Datasheets
- STR2550
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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