STR2550
- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock :
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 500V
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- -7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Height :
- 1.3mm
- Collector Base Voltage (VCBO) :
- -500V
- hFE Min :
- 10
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 500V
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- -300mV
- Width :
- 1.75mm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Base Part Number :
- STR1550
- Operating Temperature :
- 150°C TJ
- Length :
- 3.04mm
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Power - Max :
- 500mW
- Number of Elements :
- 1
- Packaging :
- Cut Tape (CT)
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 500V
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Datasheets
- STR2550

PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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