STR2550
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- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock ：
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 500mW
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Packaging :
- Cut Tape (CT)
- hFE Min :
- 10
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.04mm
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Emitter Base Voltage (VEBO) :
- -7V
- Max Breakdown Voltage :
- 500V
- Base Part Number :
- STR1550
- Power - Max :
- 500mW
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 500V
- Collector Base Voltage (VCBO) :
- -500V
- Collector Emitter Voltage (VCEO) :
- 500V
- Collector Emitter Saturation Voltage :
- -300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Width :
- 1.75mm
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- Factory Lead Time :
- 8 Weeks
- Height :
- 1.3mm
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Datasheets
- STR2550
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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