STR2550
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- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock ：
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Length :
- 3.04mm
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Number of Elements :
- 1
- Max Power Dissipation :
- 500mW
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Packaging :
- Cut Tape (CT)
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- 150°C TJ
- Height :
- 1.3mm
- Max Breakdown Voltage :
- 500V
- Collector Base Voltage (VCBO) :
- -500V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 500V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Number of Pins :
- 3
- hFE Min :
- 10
- Polarity/Channel Type :
- PNP
- Base Part Number :
- STR1550
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.75mm
- Collector Emitter Voltage (VCEO) :
- 500V
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- -7V
- Collector Emitter Saturation Voltage :
- -300mV
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Power - Max :
- 500mW
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STR2550
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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