STR2550
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- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock ：
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 500V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 500V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Base Part Number :
- STR1550
- Length :
- 3.04mm
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Power Dissipation :
- 500mW
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Collector Base Voltage (VCBO) :
- -500V
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 500V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Packaging :
- Cut Tape (CT)
- Height :
- 1.3mm
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power - Max :
- 500mW
- Collector Emitter Saturation Voltage :
- -300mV
- hFE Min :
- 10
- Transistor Element Material :
- SILICON
- Width :
- 1.75mm
- Datasheets
- STR2550
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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