STR2550
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- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock ：
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 500mW
- Max Collector Current :
- 500mA
- Packaging :
- Cut Tape (CT)
- Max Power Dissipation :
- 500mW
- Terminal Position :
- Dual
- Length :
- 3.04mm
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- hFE Min :
- 10
- Number of Terminations :
- 3
- Height :
- 1.3mm
- Factory Lead Time :
- 8 Weeks
- Width :
- 1.75mm
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Collector Emitter Breakdown Voltage :
- 500V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Base Part Number :
- STR1550
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -500V
- Max Breakdown Voltage :
- 500V
- Collector Emitter Voltage (VCEO) :
- 500V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -300mV
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -7V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Datasheets
- STR2550
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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