STP3NB100

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Base Part Number :

STP3N

Power Dissipation-Max :

100W Tc

Drain to Source Voltage (Vdss) :

1000V

Pulsed Drain Current-Max (IDM) :

12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

12ns

Pin Count :

3

Fall Time (Typ) :

28 ns

Transistor Element Material :

SILICON

Element Configuration :

Single

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

244 mJ

Drain Current-Max (Abs) (ID) :

3A

Series :

PowerMESH™

Rds On (Max) @ Id, Vgs :

6 Ω @ 1.5A, 10V

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

1kV

Current - Continuous Drain (Id) @ 25°C :

3A Tc

ECCN Code :

EAR99

Voltage - Rated DC :

1kV

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

30V

Current Rating :

3A

Continuous Drain Current (ID) :

3A

Drain-source On Resistance-Max :

6Ohm

FET Type :

N-Channel

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Power Dissipation :

100W

Lead Free :

Contains Lead

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V