STP30NM30N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

25 ns

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

90m Ω @ 15A, 10V

Power Dissipation-Max :

160W Tc

ECCN Code :

EAR99

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

Power Dissipation :

160W

Package / Case :

TO-220-3

Height :

15.75mm

Drain to Source Breakdown Voltage :

300V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

Not Applicable

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Turn-Off Delay Time :

65 ns

Continuous Drain Current (ID) :

30A

Length :

10.4mm

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Rise Time :

25ns

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Operating Temperature :

-65°C~150°C TJ

Radiation Hardening :

No

Resistance :

90mOhm

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Threshold Voltage :

3V

Base Part Number :

STP30N

Series :

MDmesh™ II

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

900 mJ

Width :

4.6mm

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Fall Time (Typ) :

25 ns

FET Type :

N-Channel