STP38N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Series :

MDmesh™ V

Resistance :

95mOhm

Power Dissipation :

190W

Case Connection :

Isolated

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

650V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Rise Time :

9ns

Fall Time (Typ) :

9 ns

Rds On (Max) @ Id, Vgs :

95m Ω @ 15A, 10V

Package / Case :

TO-220-3

Turn-Off Delay Time :

66 ns

Number of Elements :

1

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Factory Lead Time :

17 Weeks

Length :

10.4mm

Avalanche Energy Rating (Eas) :

660 mJ

Height :

15.75mm

Number of Pins :

3

Turn On Delay Time :

66 ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Continuous Drain Current (ID) :

30A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 100V

Power Dissipation-Max :

190W Tc

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Base Part Number :

STP38N

Vgs (Max) :

±25V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Width :

4.6mm

Mounting Type :

Through Hole