STP36NF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Case Connection :

DRAIN

Vgs (Max) :

±18V

Current Rating :

30A

FET Type :

N-Channel

Turn-Off Delay Time :

19 ns

Threshold Voltage :

2.5V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Packaging :

Tube

Width :

4.6mm

Drain to Source Breakdown Voltage :

60V

Series :

STripFET™ II

Lead Free :

Lead Free

Number of Terminations :

3

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

18V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Resistance :

32mOhm

Continuous Drain Current (ID) :

30A

Rds On (Max) @ Id, Vgs :

40m Ω @ 15A, 10V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

60V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Factory Lead Time :

12 Weeks

Height :

9.15mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Fall Time (Typ) :

13 ns

Mount :

Through Hole

Power Dissipation-Max :

70W Tc

Number of Pins :

3

Avalanche Energy Rating (Eas) :

225 mJ

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Pin Count :

3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Base Part Number :

STP36N

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Length :

10.4mm

Element Configuration :

Single

Rise Time :

80ns

Transistor Element Material :

SILICON

Power Dissipation :

70W

JESD-609 Code :

e3