STP36N60M6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

208W Tc

Number of Elements :

1

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4.75V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 100V

Package / Case :

TO-220-3

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Base Part Number :

STP36N

Series :

MDmesh™ M6

Avalanche Energy Rating (Eas) :

750 mJ

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.099Ohm

Rds On (Max) @ Id, Vgs :

99m Ω @ 15A, 10V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

30A

Pulsed Drain Current-Max (IDM) :

102A

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

44.3nC @ 10V