STP36N55M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Factory Lead Time :

17 Weeks

Base Part Number :

STP36N

Series :

MDmesh™ V

Number of Pins :

3

Power Dissipation :

190W

Turn On Delay Time :

56 ns

Operating Temperature :

150°C TJ

Mount :

Through Hole

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 100V

Drain-source On Resistance-Max :

0.08Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Drain to Source Breakdown Voltage :

550V

Transistor Application :

SWITCHING

Number of Elements :

1

Width :

4.6mm

Vgs(th) (Max) @ Id :

5V @ 250μA

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

56 ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

80m Ω @ 16.5A, 10V

Gate to Source Voltage (Vgs) :

25V

Element Configuration :

Single

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Power Dissipation-Max :

190W Tc

Packaging :

Tube

Transistor Element Material :

SILICON

Height :

15.75mm

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

33A

Length :

10.4mm

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V