STP32NM50N
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- Mfr.Part #
- STP32NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N CH 500V 22A TO-220
- Stock
- 3,653
- In Stock ：
- 3,653
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 11A, 10V
- Continuous Drain Current (ID) :
- 22A
- Rise Time :
- 9.5ns
- Package / Case :
- TO-220-3
- Base Part Number :
- STP32N
- Vgs (Max) :
- ±25V
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 340 mJ
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Series :
- MDmesh™ II
- Number of Terminations :
- 3
- Power Dissipation :
- 190W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1973pF @ 50V
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Turn-Off Delay Time :
- 110 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 62.5nC @ 10V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 23.6 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max :
- 190W Tc
- FET Type :
- N-Channel
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 88A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- STP32NM50N
N-Channel Tube 130m Ω @ 11A, 10V ±25V 1973pF @ 50V 62.5nC @ 10V TO-220-3
STP32NM50N Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 340 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1973pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 88A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STP32NM50N Features
the avalanche energy rating (Eas) is 340 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 88A.
STP32NM50N Applications
There are a lot of STMicroelectronics
STP32NM50N applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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