STP190N55LF3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

160 ns

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Turn On Delay Time :

20 ns

Radiation Hardening :

No

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

55V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Avalanche Energy Rating (Eas) :

1000 mJ

Factory Lead Time :

12 Weeks

Mount :

Through Hole

Vgs (Max) :

±18V

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 25V

Continuous Drain Current (ID) :

120A

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

18V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Terminal Finish :

Tin (Sn)

Series :

STripFET™

Resistance :

3.7Ohm

Packaging :

Tube

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

480A

Power Dissipation-Max :

312W Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 30A, 10V

Base Part Number :

STP190

Rise Time :

40ns

Fall Time (Typ) :

40 ns

Power Dissipation :

312W

Current - Continuous Drain (Id) @ 25°C :

120A Tc