STP100NF04

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Continuous Drain Current (ID) :

120A

Weight :

4.535924g

Pulsed Drain Current-Max (IDM) :

480A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Pin Count :

3

Package / Case :

TO-220-3

Height :

9.15mm

ECCN Code :

EAR99

Length :

10.4mm

Mounting Type :

Through Hole

Rise Time :

220ns

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Resistance :

4.6mOhm

Power Dissipation-Max :

300W Tc

Mount :

Through Hole

Turn On Delay Time :

35 ns

Series :

Automotive, AEC-Q101, STripFET™ II

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300W

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Tube

Base Part Number :

STP100

Fall Time (Typ) :

50 ns

Turn-Off Delay Time :

80 ns

Voltage - Rated DC :

40V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Transistor Application :

SWITCHING

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 50A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Width :

4.6mm

Drain to Source Breakdown Voltage :

40V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Current Rating :

120A

Number of Pins :

3

JESD-609 Code :

e3