STP100NF04
- Mfr.Part #
- STP100NF04
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A TO220AB
- Stock
- 1,572
- In Stock :
- 1,572
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Width :
- 4.6mm
- Power Dissipation :
- 300W
- Pin Count :
- 3
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Turn On Delay Time :
- 35 ns
- Lead Free :
- Lead Free
- Length :
- 10.4mm
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 40V
- Number of Terminations :
- 3
- Current Rating :
- 120A
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 4.6m Ω @ 50A, 10V
- Element Configuration :
- Single
- Packaging :
- Tube
- Series :
- Automotive, AEC-Q101, STripFET™ II
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Power Dissipation-Max :
- 300W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Weight :
- 4.535924g
- Resistance :
- 4.6mOhm
- Pulsed Drain Current-Max (IDM) :
- 480A
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 220ns
- Fall Time (Typ) :
- 50 ns
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 120A
- Height :
- 9.15mm
- Base Part Number :
- STP100
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 80 ns
- Number of Pins :
- 3
- Factory Lead Time :
- 12 Weeks
- Threshold Voltage :
- 4V
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 40V
- Datasheets
- STP100NF04
STP100NF04 Documents

N-Channel Tube 4.6m Ω @ 50A, 10V ±20V 5100pF @ 25V 150nC @ 10V TO-220-3
STP100NF04 Description
The STMicroelectronics STP100NF04 Power MOSFET has been developed using the STMicroelectronics'unique STripFET? process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switches in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
STP100NF04 Features
-
AEC-Q101 qualified
-
Exceptional dv/dt capability
-
100% avalanche tested
-
Low gate charge
STP100NF04 Applications
-
Primary switch
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