STP18N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

110W Tc

Lead Free :

Lead Free

Factory Lead Time :

17 Weeks

Mount :

Through Hole

Packaging :

Tube

Base Part Number :

STP18N

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 100V

Element Configuration :

Single

Resistance :

220mOhm

Power Dissipation :

110W

Turn-Off Delay Time :

36 ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Case Connection :

DRAIN

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

220m Ω @ 7.5A, 10V

Number of Terminations :

3

Drain to Source Breakdown Voltage :

650V

Length :

10.4mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Pulsed Drain Current-Max (IDM) :

60A

Number of Pins :

3

Series :

MDmesh™ V

Width :

4.6mm

Vgs (Max) :

±25V

Turn On Delay Time :

36 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

15.75mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Continuous Drain Current (ID) :

15A

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole