STP180N10F3
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- Mfr.Part #
- STP180N10F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 120A TO220
- Stock
- 24,832
- In Stock ：
- 24,832
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- STripFET™ III
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Pin Count :
- 3
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 5.1mOhm
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Base Part Number :
- STP180
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tube
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Fall Time (Typ) :
- 6.9 ns
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Rise Time :
- 97.1ns
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 25.6 ns
- Power Dissipation-Max :
- 315W Tc
- Rds On (Max) @ Id, Vgs :
- 5.1m Ω @ 60A, 10V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 114.6nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 315W
- Drain to Source Breakdown Voltage :
- 100V
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 6665pF @ 25V
- Continuous Drain Current (ID) :
- 120A
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 480A
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 99.9 ns
- Datasheets
- STP180N10F3
N-Channel Tube 5.1m Ω @ 60A, 10V ±20V 6665pF @ 25V 114.6nC @ 10V TO-220-3
STP180N10F3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6665pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 99.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 480A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25.6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STP180N10F3 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 99.9 ns
based on its rated peak drain current 480A.
STP180N10F3 Applications
There are a lot of STMicroelectronics
STP180N10F3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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