STP16NS25FP
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- Mfr.Part #
- STP16NS25FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 16A TO220FP
- Stock
- 7,962
- In Stock ：
- 7,962
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 83nC @ 10V
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- MESH OVERLAY™
- Pulsed Drain Current-Max (IDM) :
- 64A
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 8A, 10V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 250V
- Continuous Drain Current (ID) :
- 16A
- Power Dissipation-Max :
- 40W Tc
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1270pF @ 25V
- Operating Temperature :
- -65°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- STP16N
- Current Rating :
- 16A
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Rise Time :
- 26ns
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 32 ns
- Drain-source On Resistance-Max :
- 0.28Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 250V
- Number of Terminations :
- 3
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Power Dissipation :
- 40W
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- STP16NS25FP
N-Channel Tube 280m Ω @ 8A, 10V ±20V 1270pF @ 25V 83nC @ 10V TO-220-3 Full Pack
STP16NS25FP Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 600 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1270pF @ 25V.This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).Pulsed drain current is maximum rated peak drain current 64A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP16NS25FP Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 64A.
STP16NS25FP Applications
There are a lot of STMicroelectronics
STP16NS25FP applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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