STP16NS25

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

600 mJ

Current Rating :

16A

Drain-source On Resistance-Max :

0.28Ohm

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Elements :

1

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

32 ns

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Series :

MESH OVERLAY™

Input Capacitance (Ciss) (Max) @ Vds :

1270pF @ 25V

Base Part Number :

STP16N

Voltage - Rated DC :

250V

Drain to Source Breakdown Voltage :

250V

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

140W Tc

Number of Pins :

3

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

26ns

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

280m Ω @ 8A, 10V

Power Dissipation :

140W

Pulsed Drain Current-Max (IDM) :

64A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Mounting Type :

Through Hole

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

16A

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant