STP165N10F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

315W Tc

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Transistor Element Material :

SILICON

Number of Elements :

1

Radiation Hardening :

No

Turn On Delay Time :

29.6 ns

Turn-Off Delay Time :

154 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Series :

DeepGATE™, STripFET™

ECCN Code :

EAR99

Fall Time (Typ) :

106 ns

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

480A

Packaging :

Tube

Power Dissipation :

315W

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Package / Case :

TO-220-3

Resistance :

5.5mOhm

Factory Lead Time :

20 Weeks

Base Part Number :

STP165

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

JESD-30 Code :

R-PSFM-T3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

62ns

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 60A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

120A