STP15NK50Z
- Mfr.Part #
- STP15NK50Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 14A TO220AB
- Stock
- 7,112
- In Stock :
- 7,112
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Rise Time :
- 23ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Series :
- SuperMESH™
- FET Type :
- N-Channel
- Additional Feature :
- High Voltage
- Current Rating :
- 14A
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -50°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2260pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 340m Ω @ 7A, 10V
- Power Dissipation-Max :
- 160W Tc
- Continuous Drain Current (ID) :
- 7A
- Turn-Off Delay Time :
- 62 ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Base Part Number :
- STP15N
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 106nC @ 10V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 20 ns
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±30V
- Width :
- 4.6mm
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 10.4mm
- Pulsed Drain Current-Max (IDM) :
- 56A
- Threshold Voltage :
- 3.75V
- Height :
- 15.75mm
- Factory Lead Time :
- 12 Weeks
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Power Dissipation :
- 160W
- Fall Time (Typ) :
- 15 ns
- Datasheets
- STP15NK50Z

N-Channel Tube 340m Ω @ 7A, 10V ±30V 2260pF @ 25V 106nC @ 10V TO-220-3
STP15NK50Z Description
The well-known strip-based PowerMESHTM layout of ST is greatly optimized to produce the SuperMESHTM series. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications. Such a series completes ST's line of high voltage MOSFETs, which includes the ground-breaking MDmeshTM devices.
STP15NK50Z Features
-
100% avalanche tested
-
Gate charge minimized
-
Very low intrinsic capacitances
-
Extremely high dv/dt capability
-
Very good manufacturing repeatibility
STP15NK50Z Applications
-
Enterprise systems
-
Personal electronics
-
Switching application
-
Communications equipment
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