STP15N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Vgs (Max) :

±25V

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

85W

Length :

10.4mm

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

650V

Number of Elements :

1

Mount :

Through Hole

Height :

15.75mm

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

340m Ω @ 5.5A, 10V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Base Part Number :

STP15N

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

FET Type :

N-Channel

Turn-Off Delay Time :

30 ns

Power Dissipation-Max :

125W Tc

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 100V

Resistance :

340mOhm

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

ECCN Code :

EAR99

Series :

MDmesh™ V

Factory Lead Time :

17 Weeks

Turn On Delay Time :

30 ns

Width :

4.6mm

Pulsed Drain Current-Max (IDM) :

44A

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ