STP14NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Resistance :

380mOhm

Rise Time :

13ns

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Number of Pins :

3

JESD-609 Code :

e3

Base Part Number :

STP14N

Pin Count :

3

Operating Temperature :

150°C TJ

Power Dissipation-Max :

125W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

6A

Fall Time (Typ) :

20 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

3 V

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Power Dissipation :

125W

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

650V

Transistor Element Material :

SILICON

Element Configuration :

Single

Series :

MDmesh™ II

Turn-Off Delay Time :

55 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

25V

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

48A

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 50V

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

12A

Mounting Type :

Through Hole

FET Type :

N-Channel

Number of Elements :

1

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs (Max) :

±25V