STP14NF12

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Power Dissipation-Max :

60W Tc

Power Dissipation :

60W

Fall Time (Typ) :

8 ns

Continuous Drain Current (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Base Part Number :

STP14N

Drain to Source Breakdown Voltage :

120V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Number of Pins :

3

Mounting Type :

Through Hole

Radiation Hardening :

No

Width :

4.6mm

Length :

10.4mm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

180m Ω @ 7A, 10V

ECCN Code :

EAR99

Rise Time :

25ns

Avalanche Energy Rating (Eas) :

60 mJ

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

16 ns

Pulsed Drain Current-Max (IDM) :

56A

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Weight :

4.535924g

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

REACH SVHC :

No SVHC

Threshold Voltage :

3V

Series :

STripFET™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Number of Terminations :

3

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

32 ns

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Height :

15.75mm

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Pin Count :

3

FET Type :

N-Channel