STP13N65M2
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- Mfr.Part #
- STP13N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 10A TO220
- Stock
- 3,217
- In Stock ：
- 3,217
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 25V
- Power Dissipation-Max :
- 110W Tc
- Turn-Off Delay Time :
- 38 ns
- Base Part Number :
- STP13N
- Continuous Drain Current (ID) :
- 10A
- Length :
- 10.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Operating Temperature :
- 150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 590pF @ 100V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount, Through Hole
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 430m Ω @ 5A, 10V
- Factory Lead Time :
- 16 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±25V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Series :
- MDmesh™ M2
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Width :
- 4.6mm
- Turn On Delay Time :
- 11 ns
- Height :
- 15.75mm
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 650V
- Datasheets
- STP13N65M2
N-Channel Tube 430m Ω @ 5A, 10V ±25V 590pF @ 100V 17nC @ 10V 650V TO-220-3
STP13N65M2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 590pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STP13N65M2 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 38 ns
a 650V drain to source voltage (Vdss)
STP13N65M2 Applications
There are a lot of STMicroelectronics
STP13N65M2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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