STP130N10F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Number of Terminations :

3

Turn-Off Delay Time :

52 ns

Power Dissipation :

250W

Base Part Number :

STP130

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Resistance :

9.6mOhm

Lead Free :

Lead Free

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

250W Tc

Drain to Source Breakdown Voltage :

100V

Series :

STripFET™ III

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

7.2 ns

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Terminal Position :

Single

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

120A

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

450A

Input Capacitance (Ciss) (Max) @ Vds :

3305pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

38ns

Additional Feature :

ULTRA LOW RESISTANCE

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 60A, 10V

Moisture Sensitivity Level (MSL) :

Not Applicable

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Turn On Delay Time :

17 ns

ECCN Code :

EAR99