STP12PF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Drain to Source Breakdown Voltage :

-60V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.4mm

Termination :

Through Hole

Fall Time (Typ) :

10 ns

Transistor Element Material :

SILICON

Weight :

4.535924g

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

200 mJ

Dual Supply Voltage :

60V

Current Rating :

-12A

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Pins :

3

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Lead Free :

Lead Free

Package / Case :

TO-220-3

Radiation Hardening :

No

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

200m Ω @ 10A, 10V

REACH SVHC :

No SVHC

Nominal Vgs :

3.4 V

Base Part Number :

STP12

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Pin Count :

3

Series :

STripFET™ II

Power Dissipation :

60W

Threshold Voltage :

3.4V

Transistor Application :

SWITCHING

Power Dissipation-Max :

60W Tc

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

12A

Turn On Delay Time :

20 ns

Height :

9.15mm

Moisture Sensitivity Level (MSL) :

Not Applicable

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 25V

Resistance :

200mOhm

Width :

4.6mm

Voltage - Rated DC :

-60V

FET Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

48A

Operating Temperature :

-55°C~175°C TJ

Rise Time :

40ns

Turn-Off Delay Time :

40 ns